tsm 8n70 70 0 v n - channel power mosfet 1 / 8 version: c12 product summary v ds (v) r ds(on) () (max) i d (a) 700 0.9 @ v gs =10v 8 ito - 220 general description the tsm 8n70 n - channel enhancement mode power mosfet is produced by planar stripe dmos technology. this advanced technology has been especial ly tailored to minimize on - state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. features low r ds(on) 0.75 ( typ .) low gate charge typical @ 32 nc (typ.) low crss typical @ 13.7 pf ( typ.) fast switching ordering information part no. package packing tsm 8 n 70 ci c0 ito - 220 50pcs / tube absolute maximum rating ( ta = 25 o c unless otherwise noted ) parameter symbol limit unit drain - source voltage v ds 700 v gate - source voltage v g s 30 v t c = 25oc 8 a continuous drain current t c = 100 oc i d 4. 8 a pulsed drain current * i dm 32 a single pulse avalanche energy (note 2) e as 266 mj avalanche current (repetitive) (note 2 i as 8 a single pulse avalanche energy (note 1 ) e a r 11.6 mj avalanche current (repetitive) (note 1) i ar 8 a total power dissipation @ t c = 25 o c p tot 4 0 w operating junction temperature t j 150 oc storage temperature range t stg - 55 to +150 o c note: limited by maximum junction temperature thermal perform ance parameter symbol limit unit thermal resistance - junction to case r? jc 3.1 o c/w thermal resistance - junction to ambient r? ja 62.5 o c/w note s : surface mounted on fr4 board t 10sec block diagram n - channel mosfet pin definition : 1. gate 2. drain 3. source
tsm 8n70 70 0 v n - channel power mosfet 2 / 8 version: c12 electrical specifications ( ta = 25 o c unless otherwise noted ) parameter conditions symbol min typ max u nit static drain - source breakd own voltage v gs = 0 v, i d = 250ua bv dss 700 -- -- v drain - source on - state resistance v gs = 10v, i d = 4 a r ds(on) -- 0. 75 0. 9 gate threshold voltage v ds = v gs , i d = 250ua v gs(th) 2 .0 -- 4 .0 v zero gate voltage drain current v ds = 70 0v, v gs = 0v i dss -- - - 1 ua gate body leakage v gs = 3 0v, v ds = 0v i gss -- -- 10 ua forward transfer conductance v ds = 10v, i d = 4 a g fs -- 1 1 -- s dynamic total gate charge q g -- 32 -- gate - source charge q gs -- 9 -- gate - drain cha rge v ds = 56 0v, i d = 8 a, v gs = 10v q gd -- 8 -- nc input capacitance c iss -- 2006 -- output capacitance c oss -- 148 -- reverse transfer capacitance v ds = 25v, v gs = 0v, f = 1.0mhz c rss -- 13.7 -- pf switching turn - on delay time t d(on) -- 23 -- turn - on rise time t r -- 69 -- turn - off delay time t d(off) -- 144 -- turn - off fall time v gs = 10v, i d = 1 0 a, v dd = 300v, r g = 25 t f -- 77 -- ns source - drain diode ratings and characteristic source current i s -- -- 8 a source curren t (pulse) integral reverse diode in the mosfet i s m -- -- 32 a diode forward voltage i s = 8 a, v gs = 0v v sd -- -- 1.4 v reverse recovery time t f r -- 42 0 -- ns reverse recovery charge v gs = 0v, i s = 8 a , di f /dt = 100a/us q f r -- 4. 2 -- uc note 1: repetitive rating: pulse width limited by maxi mum junction temperature note 2: v dd = 50v, i as = 8 a, l= 7.74 mh, r g = 25 , starting t j = 25oc note 3: p ulse test: pulse width 300us, duty cycle 2% note 4: essentially independent of operating temperature
tsm 8n70 70 0 v n - channel power mosfet 3 / 8 version: c12 gate charge test circuit & waveform resistive switching test circuit & waveform e as test circuit & waveform
tsm 8n70 70 0 v n - channel power mosfet 4 / 8 version: c12 diode reverse recovery time test circuit & waveform
tsm 8n70 70 0 v n - channel power mosfet 5 / 8 version: c12 electrical characteristics curve ( ta = 25 o c , unless otherwise noted ) output characteristics transfer characteristics on - resistance vs. drain current gate cha rge on - resistance vs. junction temperature source - drain diode forward voltage
tsm 8n70 70 0 v n - channel power mosfet 6 / 8 version: c12 electrical characteristics curve ( ta = 25 o c , unless otherwise noted ) bv ds vs. junction temperature drain current vs., case temperature capacitance maximum safe operating area
tsm 8n70 70 0 v n - channel power mosfet 7 / 8 version: c12 ito - 220 mechanical drawing unit: millimeters marking diagram y = year code m = month code ( a =jan, b =feb, c =mar, d =apl, e =may, f =jun, g =jul, h =aug, i =sep, j =oct, k =nov, l =dec) l = lot code
tsm 8n70 70 0 v n - channel power mosfet 8 / 8 version: c12 notice specifications of the products displayed herein are subject to change without notice. tsc or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. information containe d herein is intended to provide a product description only. no license, express or implied, to any intellectual property rights is granted by this document. except as provided in tscs terms and conditions of sale for such products, tsc assumes no liabilit y whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of tsc products including liability or warranties relating to fitness fo r a particular purpose, merchantability, or infringement of any patent, copyright, or other int ellectual property right. the products shown herein are not designed for use in medical, life - saving, or life - sustaining applications. customers using or selling these products for use in such applications do so at their own risk and a gree to fully indemn ify tsc for any damages resulting from such improper use or sale.
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